COMPREHENSIVE STUDY OF NARROW-GAP P-TYPE MNXHG1-XTE SEMICONDUCTORS

Authors
BODNARUK OA VERTII AA IVANCHENKO IV POPENKO NA TARAPOV SI GORBATYUK IN RARENKO IM
Citation
Oa. Bodnaruk et al., COMPREHENSIVE STUDY OF NARROW-GAP P-TYPE MNXHG1-XTE SEMICONDUCTORS, Semiconductors, 30(7), 1996, pp. 652-655
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
7
Year of publication
1996
Pages
652 - 655
Database
ISI
SICI code
1063-7826(1996)30:7<652:CSONPM>2.0.ZU;2-4
Abstract
The results of an experimental study of the transport coefficients in solid solutions of the semimagnetic semiconductors MnxHg1-xTe are repo rted. The samples were obtained from the same ingot, A comparative ana lysis of the electrical properties of the samples cut from the same in got is performed and it is shown that in the central part of the ingot the grown crystal is in no way inferior to the best CdxHg1-xTe sample s. (C) 1996 American Institute of Physics.