MAXIMUM WORKING TEMPERATURE OF INASSB INASSBP DIODE-LASERS/

InAsSb/InAsSbP diode lasers with radiation wavelength lambda=3.4 mu m are investigated. The maximum lasing temperature is found to be T-max= 203 K. The excitation level in the active region of the laser increase s with current above threshold. It is shown that the existence of a ma ximum working temperature of the laser is due to losses of laser radia tion on nonequilibrium charge carriers. It is noted that surface recom bination influences the maximum working temperature of the laser. It i s shown that T-max can be increased by decreasing the exit losses and increasing the optical confinement coefficient. (C) 1996 American Inst itute of Physics.