Tt. Mnatsakanov et Vb. Shuman, EFFECT OF HEAVY DOPING AND HIGH INJECTION LEVELS ON THE PHOTOVOLTAIC EFFECT IN P(-N-N(+)-STRUCTURES WITH VERTICAL JUNCTIONS()), Semiconductors, 30(7), 1996, pp. 680-682
The influence of the combined effects of heavy doping and high injecti
on levels on the characteristics of silicon solar cells with vertical
p - n - junctions is examined. Both effects are found to have a major
influence on limiting the parameters of solar cells. The most importan
t of the doping effects is a narrowing of the band gap in silicon. (C)
1996 American institute of Physics.