EFFECT OF HEAVY DOPING AND HIGH INJECTION LEVELS ON THE PHOTOVOLTAIC EFFECT IN P(-N-N(+)-STRUCTURES WITH VERTICAL JUNCTIONS())

Authors
MNATSAKANOV TT SHUMAN VB
Citation
Tt. Mnatsakanov et Vb. Shuman, EFFECT OF HEAVY DOPING AND HIGH INJECTION LEVELS ON THE PHOTOVOLTAIC EFFECT IN P(-N-N(+)-STRUCTURES WITH VERTICAL JUNCTIONS()), Semiconductors, 30(7), 1996, pp. 680-682
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
7
Year of publication
1996
Pages
680 - 682
Database
ISI
SICI code
1063-7826(1996)30:7<680:EOHDAH>2.0.ZU;2-0
Abstract
The influence of the combined effects of heavy doping and high injecti on levels on the characteristics of silicon solar cells with vertical p - n - junctions is examined. Both effects are found to have a major influence on limiting the parameters of solar cells. The most importan t of the doping effects is a narrowing of the band gap in silicon. (C) 1996 American institute of Physics.