Zirconium nitride (ZrN) belongs to the group of technologically import
ant materials, namely hard tribological coatings. X-ray photoelectron
spectroscopy (XPS) in combination with polarization experiments and el
ectrochemical a.c. impedance spectroscopy has been used to study the c
omposition, structure, thickness and electronic properties of layers f
ormed by electrochemical oxidation of ZrN in phthalate buffer (pH 5.0)
. Results are compared to those obtained for layers formed by thermal
oxidation at elevated temperature, i.e. ZrO2, as well as by air oxidat
ion at room temperature. Electrochemical oxidation of ZrN to ZrO2 proc
eeds via the formation of a mixed oxynitride/oxide layer, which then t
ransforms into oxide at sufficiently positive potentials. Angle-resolv
ed XPS measurements contribute to a better understanding of the in-dep
th layer structure. Exposure of ZrN to air at room temperature results
in the formation of a thin oxynitride/oxide layer. The layer exhibits
a gradually changing in-depth distribution of various species, i.e. n
itride, oxynitride and oxide. Analysis of XPS valence band spectra off
ers valuable information concerning the electronic properties of inves
tigated materials. The experimental valence band spectrum for ZrN corr
elates web with a theoretically calculated density-of-states diagram f
rom the literature. In contrast to ZrN, which is a metallic conductor,
layers formed by electrochemical oxidation, as well as by air oxidati
on, exhibit insulating properties. The insulating character of the for
med layers is supported also by a decreased current density in subsequ
ent cycles in cyclic voltammograms, as well as by the resistivity valu
e (similar to 10(12) Ohm . cm) calculated from a.c. impedance measurem
ents. Therefore, the oxide layer formed on ZrN is stable and prevents
further oxidation of the ZrN substrate.