The structure of arsenic monolayers on InP(110) surfaces has been inve
stigated by combining optical spectroscopy with calculations of the su
rface atomic structure and optical properties. A highly ordered surfac
e structure is obtained after As deposition at room temperature follow
ed by annealing at 300 degrees C. From the excellent agreement between
the experimental and theoretical results we conclude that the ordered
structure consists of an InAs monolayer on the substrate surface.