M. Benchorin et al., INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI, Physical review letters, 77(4), 1996, pp. 763-766
The photoluminescence excitation technique is used to monitor the abso
rption characteristics of Si nanocrystals. Contributions from differen
t critical points are identified, and their shift with reduced size is
deduced. The enhancement of the oscillator strength of the indirect o
ptical transitions due to the confinement is estimated.