THE USE OF A DOUBLE MASK SYSTEM TO PREVENT TI DIFFUSION FROM A TI PT/AU OHMIC CONTACT ON DIAMOND/

Ohmic contacts on diamond were fabricated using a Ti/Pt/Au metallizati on scheme and two transmission line model masks. The double mask syste m is used to isolate the Ti by surrounding it with Pt. Pt is expected to prevent Ti diffusion either to the contact surface or along the dia mond surface during annealing. In this study we found that this system of masks was successful in preventing the Ti diffusion as revealed by Auger analysis on the diamond and contact surfaces. An Auger depth pr ofile revealed that the Ti was confined to the diamond/contact interfa cial region, and was most likely combined with Pt.