Thin manganese films of thicknesses in the range 20-160 nm have been v
acuum deposited on glass substrates at room temperature. The electrica
l resistivity, Hall coefficient and thermolelectric power were measure
d. The electrical resistivity data were analyzed using Chamber's and F
uch's theories to determine the resistivity of manganese films of infi
nite thickness rho(0), the mean free path of the electrons l(0) and th
e specularity parameter P. The electrical resistivity as a function of
the film temperature was used to determine the temperature coefficien
t of resistivity. The Hall coefficient measurements at room temperatur
e was used to calculate the number of the free electrons (n) which was
used in conjunction with the reduced Fermi energy eta obtained from t
hermoelectric power measurements to calculate the effective mass of th
e electron m in manganese films. As found, rho(0) = 312.5 mu Omega cm
, l(0) = 281.46 nm, P = 0.209, n = 3.87 x 10(28) m(-3) and m = 0.014m
(0).