ELECTRICAL-TRANSPORT PROPERTIES OF MANGANESE THIN-FILMS

Thin manganese films of thicknesses in the range 20-160 nm have been v acuum deposited on glass substrates at room temperature. The electrica l resistivity, Hall coefficient and thermolelectric power were measure d. The electrical resistivity data were analyzed using Chamber's and F uch's theories to determine the resistivity of manganese films of infi nite thickness rho(0), the mean free path of the electrons l(0) and th e specularity parameter P. The electrical resistivity as a function of the film temperature was used to determine the temperature coefficien t of resistivity. The Hall coefficient measurements at room temperatur e was used to calculate the number of the free electrons (n) which was used in conjunction with the reduced Fermi energy eta obtained from t hermoelectric power measurements to calculate the effective mass of th e electron m in manganese films. As found, rho(0) = 312.5 mu Omega cm , l(0) = 281.46 nm, P = 0.209, n = 3.87 x 10(28) m(-3) and m = 0.014m (0).