The rf sputtering method, using Ar/O-2 mixture, was applied to fabrica
te silicon oxide films. The compressive internal stresses, resulted fr
om thermal expansion mismatch, of films deposited on polycarbonate are
larger than those of films deposited on glass substrates. Addition of
oxygen to the sputtering ambient reduces both the film deposition rat
e and grain size. The adhesion of the SiO2 film to the glass substrate
are measured with pull-off test and/or scratch test. Films sputtered
in the presence of oxygen are more wear-resistant than those without o
xygen.