Gj. Parker et al., TRANSPORT OF IONS DURING ION-IMPLANTATION, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 54(1), 1996, pp. 938-945
An efficient scheme for the description of long-mean-free path particl
e transport at a kinetic level has been extended to a case where parti
cle distributions are highly anisotropic: implantation of ions into a
solid. The method calculates the scattering rate of particles througho
ut a region and obtains the particle distribution from the scattering
rate. The scattering rate is found by using a numerical form of a prop
agator to solve an integral equation. The propagator is the probabilit
y that a particle that scattered in a cell has its next scatter in any
other cell of the mesh. The main focus of this work is the way this p
ropagator can be computed efficiently and accurately for an arbitrary
angular distribution of scattered particles as compared to other compu
ter models. The method is illustrated in application to implantation o
f dopants into silicon.