Sg. Song et al., FIELD-ION MICROSCOPY OBSERVATION OF INTRINSIC STACKING-FAULTS IN IRIDIUM, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 212(1), 1996, pp. 119-122
An intrinsic stacking fault in Ir is characterized using FIM technique
s. Lattice distortion in the vicinity of the partial dislocation loop
bounding the fault is evaluated. The maximum radius of visible distort
ion in the vicinity of the partial dislocation is found to be - 4.6 nm
. This result provides experimental data for the assessment of the mag
nitude of lattice disturbance caused by crystal defects, which can be
useful in the computer modeling of crystal defects.