We have investigated the possible water adsorption forms on the steppe
d Si(110) surface. Calculations have been performed by using the empir
ical tight-binding method. Two types of adsorption model of water on a
single layer stepped Si(110) surface have been considered, one of the
m is the dissociative type (H, OH) and the other one is the molecular
type (H2O). The total electronic energy and TDOS calculations lead to
a dissociative type of water adsorption on the stepped Si(110) surface
excluding the molecular type as it was found on the flat Si(110) surf
ace.