LONGITUDINAL-OPTICAL-PHONON EFFECTS ON EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL

Citation
S. Moukhliss et al., LONGITUDINAL-OPTICAL-PHONON EFFECTS ON EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL, Physica status solidi. b, Basic research, 196(1), 1996, pp. 121-130
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
196
Issue
1
Year of publication
1996
Pages
121 - 130
Database
ISI
SICI code
0370-1972(1996)196:1<121:LEOEIG>2.0.ZU;2-F
Abstract
We have calculated the effects of the longitudinal optical phonons on the exciton binding energy in a quantum well, consisting of a single s lab of GaAs sandwiched between tyro semi-infinite slabs of Ga1-xAlxAs, as a function of the size of the GaAs well. We have found that tile c orrection due to the bulk-like LO-phonon effects on the exciton bindin g energy is quite larger than that due to the confined LO-phonon effec ts and that these effects on the binding energy of the light-hole exci ton are larger than those of the heavy-hole exciton. Our results are c ompared with recent experimental data, and good agreement has: been fo und.