Improvements in the stabilized efficiency of single-junction and multi
-junction amorphous silicon (a-Si) solar cells have been studied. The
stabilized efficiency, or efficiency after light exposure, of a-Si sol
ar cells can be improved by suppressing impurities such as oxygen and
nitrogen in the intrinsic (i-) layer of the cells. It has also been fo
und that the defect density of a-Si films and conversion efficiency of
a-Si solar cells both at the initial state and the stabilized state a
re strongly correlated with the content of hydrogen having an SiH2 con
figuration rather than with the total hydrogen content in a-Si i-layer
s. This strongly suggests that some measures are still available to re
duce the stabilized N-d of the a-Si i-layer while conserving the suita
ble optical properties. A practical estimation method, which considers
the variation of the I-V characteristics of each component cell, is a
lso developed in order to optimize multi-junction cells. Stabilized ef
ficiencies of 8.8% for a single-junction a-Si solar cell and 10.6% for
an a-Si/a-SiGe double-junction solar cell have been achieved for 1 cm
(2) cells.