T. Strand et al., TECHNICAL EVALUATION OF A DUAL-JUNCTION SAME-BAND-GAP AMORPHOUS-SILICON PHOTOVOLTAIC SYSTEM, Solar energy materials and solar cells, 41-2, 1996, pp. 617-628
Monitoring of a 1.8-kW(ac) utility-interconnect photovoltaic (PV) syst
em employing amorphous silicon (a-Si) modules was initiated on Decembe
r 7, 1992, at our outdoor PV test site. This system was deployed to co
nduct an in-situ technical evaluation of the PV array (in a high volta
ge configuration), and system performance and reliability in a utility
-interconnect application. The system is unique because construction-g
rade insulation was added to the back of each PV module. Insulation wa
s added in an attempt to levelize the annual array power output by ele
vating the operating temperature of the modules (thus enhancing therma
l annealing). Array and system performance data are presented and the
effects of individual losses as well as seasonal changes on PV array a
nd system performance are quantified. In agreement with past results w
e show that the seasonal variations in array peak power largely result
from changes in current that are well-correlated with temperature and
inversely correlated with air mass. Thermally-induced annealing and l
ight-induced degradation are shown to be prominent influences on dual-
junction a-Si PV array performance. We also show that fill factor is r
elatively stable. This is attributed to the opposing influences of the
rmal and spectral effects, causing a reduction in the seasonal variati
on in fill factor.