ON THE RELATIONSHIP BETWEEN SCHOTTKY-BARRIER CAPACITANCE AND MIXER PERFORMANCE AT CRYOGENIC TEMPERATURES

Authors
Citation
Rr. Romanofsky, ON THE RELATIONSHIP BETWEEN SCHOTTKY-BARRIER CAPACITANCE AND MIXER PERFORMANCE AT CRYOGENIC TEMPERATURES, IEEE microwave and guided wave letters, 6(8), 1996, pp. 286-288
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
10518207
Volume
6
Issue
8
Year of publication
1996
Pages
286 - 288
Database
ISI
SICI code
1051-8207(1996)6:8<286:OTRBSC>2.0.ZU;2-K
Abstract
The flat-hand voltage is the Schottky junction voltage required to shr ink the depletion width to zero, At cryogenic temperatures, mixer diod es are generally biased and/or pumped beyond the Rat-hand condition to minimize conversion loss and noise figure, This occurs despite the pr esumed sharp increase in junction capacitance near flat-band, which sh ould instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure, A simple analytic expr ession for C(V) is usually used to model and predict mixer performance , This letter provides experimental data on C(V) at 77 K based on a mi crowave measurement and modeling technique, Data is also provided on t he conversion loss of a singly balanced mixer optimized for 77 K opera tion, The connection between junction capacitance, flat-hand potential , and conversion loss is examined. It is shown that the analytic expre ssion greatly overestimates the junction capacitance that occurs as fl at-band is approached.