GROWTH AND DOPING OF SI AND SIGE FILMS BY HYDRIDE GAS-SOURCE MOLECULAR-BEAM EPITAXY

The use of molecular beams of the hydrides of Si, Ge, As and B provide s an ideal vehicle for the in-situ study of the kinetics and dynamics of growth and dopant incorporation of Si and SiGe alloy films. In this article results obtained using reflection high energy electron diffra ction (RHEED) and reflectance anisotropy (RA), otherwise known as refl ectance difference spectroscopy (RDS), are summarised. The topics cons idered include basic reaction kinetics, surface segregation of Ge and As and its effect on rate processes, the influence of surface reconstr uction domains on RA response and the application of gas-source molecu lar beam epitaxy (GSMBE) to the formation of two-dimensional electron gases in modulation-doped SiGe/Si/SiGe heterostructures.