OSCILLATORY BEHAVIOR IN ELECTROCHEMICAL DEPOSITION REACTION OF POLYCRYSTALLINE SILICON THIN-FILMS THROUGH REDUCTION OF SILICON TETRACHLORIDE IN A MOLTEN-SALT ELECTROLYTE

A new electrochemical oscillation is found for reduction reaction of s ilicon tetrachloride on a partially immersed single crystal n-Si elect rode in a lithium chloride-potassium chloride eutectic melt electrolyt e. The reduction of SiCl4, which is almost insoluble in the electrolyt e, occurs mainly near the upper edge of an electrolyte meniscus on the electrode, and it is discussed that the oscillation is caused by a ch ange in the height of the meniscus due to a change in the chemical str ucture (and hence the interfacial tension) of the electrode surface wi th progress of the silicon deposition reaction.