LOW-THRESHOLD PIEZOELECTRIC-STRAINED INGAAS-GAAS QW LASERS GROWN ON (211)B ORIENTED GAAS SUBSTRATES

Authors
SALE TE ROBERTS JS WHITBREAD ND ROBSON PN
Citation
Te. Sale et al., LOW-THRESHOLD PIEZOELECTRIC-STRAINED INGAAS-GAAS QW LASERS GROWN ON (211)B ORIENTED GAAS SUBSTRATES, IEEE photonics technology letters, 8(8), 1996, pp. 983-985
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
8
Issue
8
Year of publication
1996
Pages
983 - 985
Database
ISI
SICI code
1041-1135(1996)8:8<983:LPIQLG>2.0.ZU;2-4
Abstract
We report the operation of strained layer In0.20Ga0.80As quantum well lasers grown on (211)B GaAs substrates, thus incorporating a piezoelec tric field. Growth was by atmospheric pressure metal-organic vapor pha se epitaxy (MOVPE). The threshold current density of a 1000 mu m x 75 mu m device is 91 A . cm(-2) and waveguide transparency is estimated a t 32 A . cm(-2) for a simple separate confinement heterostructure (SCH ) emitting at 982 nm.