VISIBLE ELECTROLUMINESCENCE FROM NANOCRYSTALLITES OF SILICON FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

We have observed visible electroluminescence (EL) from silicon nanocry stallites which are embedded in a-Si:H films prepared in a plasma enha nced chemical vapor deposition system. The EL spectra are in the range of 500-850 nm with two peaks located at about 630-680 and 730 nm, res pectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction pat h is discussed in terms of the material structural characteristics, an d a tentative explanation of the light emission mechanism is proposed. (C) 1996 American Institute of Physics.