NANOSTRUCTURE FABRICATION USING THE SELECTIVE THERMAL-DESORPTION OF SIO2 INDUCED BY ELECTRON-BEAMS

It has been found that selective thermal desorption of SiO2 on Si (111 ) substrate is induced by electron-beam irradiation. By using this sel ective thermal desorption, a nanofabrication technique has been realiz ed by focused electron beams. Open windows of 10 nm width in a SiO2 fi lm have been fabricated by this technique. A pattern transfer from the open windows to thin Si films has also been performed by Si growth an d subsequent heating. This has produced Si wires of 10 nm width. (C) 1 996 American Institute of Physics.