CRYOGENIC SCANNING PROBE CHARACTERIZATION OF SEMICONDUCTOR NANOSTRUCTURES

Citation
Ma. Eriksson et al., CRYOGENIC SCANNING PROBE CHARACTERIZATION OF SEMICONDUCTOR NANOSTRUCTURES, Applied physics letters, 69(5), 1996, pp. 671-673
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
69
Issue
5
Year of publication
1996
Pages
671 - 673
Database
ISI
SICI code
0003-6951(1996)69:5<671:CSPCOS>2.0.ZU;2-3
Abstract
We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron transport through a ballistic point contact in the two-dimensional electron gas inside a GaAs/AlGaAs heterostructure. The electron gas density profile is locally perturbed by the charged SPM tip providing information about the electron flow through the point co ntact. As the tip is scanned, one obtains a spatial image of the balli stic electron flux as well as the topographic profile of the structure . Calculations indicate the spatial resolution is comparable to the el ectron gas depth. (C) 1996 American Institute of Physics.