Plasma-assisted chemical vapour deposition (PACVD) has many advantages
for the deposition of thin films. The use of ions for the energetic b
ombardment of the film during growth is an important technique for pro
ducing dense-structures, This paper discusses recent progress in the u
nderstanding of the effects of energetic bombardment on the stress lev
els and structure of films produced by plasma deposition processes. Di
agnostic equipment, such as the in situ ellipsometer, energy selecting
mass spectrometer and residual gas analyser, enables the PACVD proces
s to be closely monitored so that conditions at the growth surface can
be accurately controlled. New plasma sources, such as the helicon pla
sma source, give increased ion fluxes. The cathodic are source is also
an intense Source or highly ionized plasma which can be used for PACV
D. The deposition of rugate optical structures based on SiOxNy can be
carried out using a PACVD;process in which the refractive index profil
e is created by the computer central of gas flows. The helicon plasma
source is useful for the deposition of SiO2 films and has been adapted
for use in an ion plating process for the deposition of cubic phase B
N. The deposition of amorphous hydrogenated carbon films by PACVD of a
cetylene in a cathodic are has been shown to be possible and demonstra
tes the effect of using a highly ionized plasma for PACVD.