IR CHARACTERIZATION OF SIOXCY THIN SOLID FILMS

Authors
BESTER JA CROUSE PL ROHWER HE
Citation
Ja. Bester et al., IR CHARACTERIZATION OF SIOXCY THIN SOLID FILMS, South African Journal of Chemistry, 48(3-4), 1995, pp. 108-113
Citations number
19
Categorie Soggetti
Chemistry
Journal title
South African Journal of Chemistry → ACNP
ISSN journal
03794350
Volume
48
Issue
3-4
Year of publication
1995
Pages
108 - 113
Database
ISI
SICI code
0379-4350(1995)48:3-4<108:ICOSTS>2.0.ZU;2-2
Abstract
The infrared characterization of SiOxCy thin films deposited by means of plasma-assisted chemical vapour deposition (PACVD) using the organo metallic precursor, tetraethoxy orthosilicate (TEOS), is reported. It is shown to be possible to determine the influence of a number of expe rimental parameters on the stoichiometry and morphology of the films b y means of reflection-absorption infrared spectroscopy (RAIRS).