RADIATION-DAMAGE STUDY OF A FAST BIPOLAR MONOLITHIC CHARGE SENSITIVE PREAMPLIFIER

Citation
A. Baschirotto et al., RADIATION-DAMAGE STUDY OF A FAST BIPOLAR MONOLITHIC CHARGE SENSITIVE PREAMPLIFIER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 114(3-4), 1996, pp. 327-331
Citations number
4
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
114
Issue
3-4
Year of publication
1996
Pages
327 - 331
Database
ISI
SICI code
0168-583X(1996)114:3-4<327:RSOAFB>2.0.ZU;2-U
Abstract
A fast bipolar monolithic Charge Sensitive Preamplifier (CSP) implemen ted in the monolithic 2 mu m BiCMOS technology (called HF2CMOS), was s tudied after neutron irradiation at fluences between 1.26 x 10(12) and 1.09 x 10(14) n/cm(2). Neutron fluence effects on the base spreading resistance, r(bb'), and the parallel noise of the bipolar npn input de vice and on the PMOS transistor in the second stage of the preamplifie r, are presented. It is shown that, with the HF2CMOS process, a harden ed CSP can be realized.