A. Baschirotto et al., RADIATION-DAMAGE STUDY OF A FAST BIPOLAR MONOLITHIC CHARGE SENSITIVE PREAMPLIFIER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 114(3-4), 1996, pp. 327-331
A fast bipolar monolithic Charge Sensitive Preamplifier (CSP) implemen
ted in the monolithic 2 mu m BiCMOS technology (called HF2CMOS), was s
tudied after neutron irradiation at fluences between 1.26 x 10(12) and
1.09 x 10(14) n/cm(2). Neutron fluence effects on the base spreading
resistance, r(bb'), and the parallel noise of the bipolar npn input de
vice and on the PMOS transistor in the second stage of the preamplifie
r, are presented. It is shown that, with the HF2CMOS process, a harden
ed CSP can be realized.