STM-CONTACT WITH HYDROGEN-PASSIVATED N-TY PE SILICON SURFACE AS THE POINTED AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER

Authors
BOLOTOV LN MAKARENKO IB TIMKOV AN VEKSLER MI GREKHOV IV SHULEKIN AF
Citation
Ln. Bolotov et al., STM-CONTACT WITH HYDROGEN-PASSIVATED N-TY PE SILICON SURFACE AS THE POINTED AUGER-TRANSISTOR WITH TUNNEL MOS-EMITTER, Fizika tverdogo tela, 38(3), 1996, pp. 889-900
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Fizika tverdogo tela → ACNP
ISSN journal
03673294
Volume
38
Issue
3
Year of publication
1996
Pages
889 - 900
Database
ISI
SICI code
0367-3294(1996)38:3<889:SWHNPS>2.0.ZU;2-X