H. Kim et al., FORMATION OF FE2O3-TIO2 THIN OXIDE-FILMS BY LOW-PRESSURE MOCVD AND EVALUATION OF THEIR CORROSION-RESISTANCE, Nippon Kinzoku Gakkaishi, 60(6), 1996, pp. 600-606
Thin Fe2O3-TiO2 films were formed on Pt by a low pressure MOCVD techni
que and their corrosion resistance was examined in HCl and H2SO4 solut
ions by immersion tests, dynamic polarization tests, and in-situ ellip
sometry under potentiostatic polarization. in the immersion tests, dis
solution rate of the films was determined by ellipsometry. The dissolu
tion rate of the films in 5 kmol . m(-3) HCl decreased with increasing
cationic fraction of Ti4+ ions, X(Ti), in the films and formation tem
peratures of the films. When the value of X(Ti) exceeded 0.32, the fil
ms formed at 673 K did not dissolve in 5 kmol . m(-3) HCl and showed e
xellent corrosion resistance. The films did not dissolve in 1 kmol . m
(-3) H2SO4 under anodic polarization, but dissolved owing to the catho
dic reduction of Fe2O3 under cathodic polarization. The dissolution ra
te of the films under cathodic polarization decreased with an increase
in potential and also in the cationic fraction of Ti4+ ions, X(Ti), i
n the films.