PROPERTIES OF EPITAXIAL CDXHG1-XTE LAYERS GROWN FROM THE VAPOR-PHASE IN A QUASI-CLOSED SYSTEM

Authors
GOLOVIN SV GORSHKOV AV BOVINA LA BOLTAR KO STAFEEV VI
Citation
Sv. Golovin et al., PROPERTIES OF EPITAXIAL CDXHG1-XTE LAYERS GROWN FROM THE VAPOR-PHASE IN A QUASI-CLOSED SYSTEM, Journal of optical technology, 63(6), 1996, pp. 462-463
Citations number
5
Categorie Soggetti
Optics
Journal title
Journal of optical technology → ACNP
ISSN journal
10709762
Volume
63
Issue
6
Year of publication
1996
Pages
462 - 463
Database
ISI
SICI code
1070-9762(1996)63:6<462:POECLG>2.0.ZU;2-E
Abstract
This paper describes the electrical properties of epitaxial CdxHg1-xTe (0.2 less than or equal to x less than or equal to 0.3) layers grown by the evaporation-condensation-diffusion method in a quasi-closed vol ume in an argon atmosphere. The epitaxial layers are shown to be suite d for the production of multielement photodiode IR detectors. (C) 1996 The Optical Society of America.