MULTIPHOTON-ASSISTED TUNNELING, DYNAMIC LOCALIZATION AND ABSOLUTE NEGATIVE CONDUCTANCE

Citation
Bj. Keay et al., MULTIPHOTON-ASSISTED TUNNELING, DYNAMIC LOCALIZATION AND ABSOLUTE NEGATIVE CONDUCTANCE, Surface science, 362(1-3), 1996, pp. 176-180
Citations number
14
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
176 - 180
Database
ISI
SICI code
0039-6028(1996)362:1-3<176:MTDLAA>2.0.ZU;2-S
Abstract
We report the observation of Absolute Negative Conductance (ANC), mult iphoton stimulated emission and dynamical localization in sequential r esonant tunneling semiconductor superlattices driven by intense terahe rtz electric fields. With increasing terahertz field strength the cond uctance neat zero dc bias decreases towards zero and then becomes nega tive. This is accompanied by new steps and plateaus that are attribute d ia multiphoton-assisted resonant tunneling between ground states of neighboring quantum wells accompanied by the stimulated emission of a photon.