NONEQUILIBRIUM ACOUSTIC PHONON-ASSISTED TUNNELING IN GAAS (ALGA)AS DOUBLE-BARRIER DEVICES/

Authors
OUALI FF ZINOVEV NN CHALLIS LJ AKIMOV AV HILL DN SHEARD FW HENINI M
Citation
Ff. Ouali et al., NONEQUILIBRIUM ACOUSTIC PHONON-ASSISTED TUNNELING IN GAAS (ALGA)AS DOUBLE-BARRIER DEVICES/, Surface science, 362(1-3), 1996, pp. 181-184
Citations number
10
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
181 - 184
Database
ISI
SICI code
0039-6028(1996)362:1-3<181:NAPTIG>2.0.ZU;2-O
Abstract
We report measurements of assisted tunnelling induced by non-equilibri um phonons in double barrier tunnelling devices in GaAs. The phonon si gnal has a peak at a bias voltage which depends linearly on phonon ene rgy.