INTERFACE COMPOSITION DEPENDENCE OF THE BAND-OFFSET IN INAS GASB/

Authors
DALY MS SYMONS DM LAKRIMI M NICHOLAS RJ MASON NJ WALKER PJ
Citation
Ms. Daly et al., INTERFACE COMPOSITION DEPENDENCE OF THE BAND-OFFSET IN INAS GASB/, Surface science, 362(1-3), 1996, pp. 205-208
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
205 - 208
Database
ISI
SICI code
0039-6028(1996)362:1-3<205:ICDOTB>2.0.ZU;2-#
Abstract
We have performed 4 K magnetotransport measurements on intrinsic InAs/ GaSb multi quantum wells (MQWs) under hydrostatic pressure. Through ca reful configuration of the growth we are able to produce samples that have differing interface monolayers (either InSb or GaAs). Analysing t he data to calculate the band overlap (Delta), we find that InSb-like samples have an overlap 30 meV larger than GaAs-like in good agreement with recent theoretical predictions.