TRANSFER EFFICIENCY OF HOT-ELECTRONS IN A METAL(COSI2) INSULATOR(CAF2) QUANTUM INTERFERENCE TRANSISTOR/

Authors
SUEMASU T SAITOH W KHONO Y MORI K WATANABE M ASADA M
Citation
T. Suemasu et al., TRANSFER EFFICIENCY OF HOT-ELECTRONS IN A METAL(COSI2) INSULATOR(CAF2) QUANTUM INTERFERENCE TRANSISTOR/, Surface science, 362(1-3), 1996, pp. 209-212
Citations number
9
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
209 - 212
Database
ISI
SICI code
0039-6028(1996)362:1-3<209:TEOHIA>2.0.ZU;2-2
Abstract
We report on the transfer efficiency of hot electrons with monochromat ic energy across a nanometer-thick metal epilayer in a metal(Co Si-2)/ insulator(CaF2) quantum interference transistor. The transfer efficien cy from emitter to collector is estimated to be more than 0.96 from th e negative differential resistance characteristics of the transistor.