T. Suemasu et al., TRANSFER EFFICIENCY OF HOT-ELECTRONS IN A METAL(COSI2) INSULATOR(CAF2) QUANTUM INTERFERENCE TRANSISTOR/, Surface science, 362(1-3), 1996, pp. 209-212
We report on the transfer efficiency of hot electrons with monochromat
ic energy across a nanometer-thick metal epilayer in a metal(Co Si-2)/
insulator(CaF2) quantum interference transistor. The transfer efficien
cy from emitter to collector is estimated to be more than 0.96 from th
e negative differential resistance characteristics of the transistor.