From a combination of low-temperature photoluminescence (PL) and far-i
nfrared magnetospectroscopy on several GaAs/AlGaAs multiple quantum we
ll samples with different donor doping (well only, barrier only, both
well and barrier), we have identified a recombination line due to nega
tively charged excitons (X(-)). We have also studied the effects of ex
cess free electrons in the wells on the X(-) line. Magneto-PL for low-
density barrier-only doped samples shows both free exciton and X(-) re
combination lines at all values of held studied. However, for more hea
vily doped samples the behavior is very different. As magnetic field i
s increased, three distinct features evolve from the broad free carrie
r recombination lines. At low fields all three features are Landau lev
el recombination lines. At a field corresponding to filling factor nu=
2 the lowest energy line undergoes a discontinuous change in slope, an
d above this field it evolves into the X(-) line. In related far-infra
red magnetospectroscopy studies we have made a clear identification of
one of the predicted negative donor ion (D-) triplet transitions.