ELECTRON AND HOLE G-FACTOR OSCILLATIONS IN CDTE-BASED MODULATION-DOPED QUANTUM-WELLS

Citation
Jx. Shen et al., ELECTRON AND HOLE G-FACTOR OSCILLATIONS IN CDTE-BASED MODULATION-DOPED QUANTUM-WELLS, Surface science, 362(1-3), 1996, pp. 460-463
Citations number
7
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
460 - 463
Database
ISI
SICI code
0039-6028(1996)362:1-3<460:EAHGOI>2.0.ZU;2-Z
Abstract
We have investigated g-factor oscillations ol electrons as well as of photoexcited holes in a quasi-two dimensional electron gas (2DEG) of C dTe/(CdMg)Te modulation-doped single quantum wells by means of photolu minescence (PL) and photoluminescence excitation (PLE) spectroscopy. T he oscillation amplitude is found to be related to Landau level number s and filling factors as. predicted by the theory. The exchange consta nts A(NN), Of the g-factor enlargement have been obtained experimental ly for the first time. The observed enlargement of the g factor in CdT e/(CdMnMgTe) heterostructures, where the sign of the intrinsic g fatte r is reversed by rbe sp-d exchange interaction, confirms the results o btained for nonmagnetic CdTe/(CdMg)Te heterostructures.