INTRINSIC BISTABILITY IN NONLINEAR TRANSPORT THROUGH A SUBMICRON LATERAL BARRIER

Authors
PILLING G COBDEN DH MCEUEN PL DURUOZ CI HARRIS JS
Citation
G. Pilling et al., INTRINSIC BISTABILITY IN NONLINEAR TRANSPORT THROUGH A SUBMICRON LATERAL BARRIER, Surface science, 362(1-3), 1996, pp. 652-655
Citations number
9
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
652 - 655
Database
ISI
SICI code
0039-6028(1996)362:1-3<652:IBINTT>2.0.ZU;2-4
Abstract
We investigate nonlinear transport between regions of a 2DEG separated by a submicron barrier produced by a shallow etch in a GaAs/AlGaAs he terostructure. After illumination a region of bistability appears in t he I-V characteristic, where the current jumps randomly between zero a nd a finite value. The bistability is seen routinely in all similar de vices, and it occurs even if the etch is deeper than the 2DEG, implyin g that the current-carrying electrons leave the plane of the heterojun ction.