CONDUCTANCE FLUCTUATIONS IN NANOSTRUCTURES OF DOPED CDTE AND CD1-XMNXTE EPILAYERS

Citation
J. Jaroszynski et al., CONDUCTANCE FLUCTUATIONS IN NANOSTRUCTURES OF DOPED CDTE AND CD1-XMNXTE EPILAYERS, Surface science, 362(1-3), 1996, pp. 718-721
Citations number
24
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
718 - 721
Database
ISI
SICI code
0039-6028(1996)362:1-3<718:CFINOD>2.0.ZU;2-J
Abstract
Weak-field magnetoresistance and universal conductance fluctuations ha ve been studied at millikelvin temperatures in submicron wires of In-d oped n(+)-CdTe and n(+)-Cd0.99Mn0.01Te. The fluctuations contain a per iodic component of unknown origin. The giant spin-splitting of the ele ctron states, caused by the s-d exchange interaction with the Mn spins , results in the positive magnetoresistance and the temperature depend ence of the fluctuation pattern.