NANOFABRICATION WITH PROXIMAL PROBES

We report the fabrication of nanometer-scale Si structures using an at omic force microscope. A conducting AFM tip was used to write nanomete r-scale oxide patterns by the local anodic oxidation of a passivated S i(100) surface. These oxide patterns were used as masks for selective etching of the silicon to form the completed structures. Side-gated Si field effect transistors with critical features as small as 30 nm hav e been fabricated by this method.