COULOMB STAIRCASE WITH NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE FOR A METAL TIP METAL DOT SEMICONDUCTOR DOUBLE JUNCTION

Authors
RADOJKOVIC P HARTMANN E SCHWARTZKOPFF M ENACHESCU M STEFANOV E KOCH F
Citation
P. Radojkovic et al., COULOMB STAIRCASE WITH NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE FOR A METAL TIP METAL DOT SEMICONDUCTOR DOUBLE JUNCTION, Surface science, 362(1-3), 1996, pp. 890-893
Citations number
17
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
890 - 893
Database
ISI
SICI code
0039-6028(1996)362:1-3<890:CSWNDR>2.0.ZU;2-T
Abstract
Nanometer-sized Au dots have been fabricated on p-type Si(111) substra tes by field-induced transfer of tip material in a scanning tunneling microscope (STM). Positioning the STM tip on a very small dot (10-15 n m in diameter) allows observation of equidistant steps with a spacing of several 100 mV and regions with negative differential resistance (N DR) in the current-voltage characteristic. Numerical simulations confi rm that the capacitance between the tip and the Au dot falls into the 10(-19) F range. The occurrence of NDR might be explained by a leaking of excess carriers from the dot to the immediate surroundings.