In analogy to inorganic semiconductor devices tunnel junctions consist
ing of organic heterostructures incorporated between two gold electrod
es are built. Molecular layers are formed by using Langmuir-Blodgett f
ilms of two different molecules, a phthalocyanine- and a perylene-deri
vative. Tunnel characteristics at 4.2 K of junctions incorporating two
different molecular layers exhibit rectifying behaviour and show equi
distant steps in the current, reminiscent of single electron charging
phenomena. At higher temperatures the tunneling current is superceded
by thermal hopping processes through defect states which over-ride the
steplike structure in the curves. The absolute tunneling current thro
ugh the junction roughly scales with the active junction area.