ELECTRIC-FIELD-INDUCED NONOHMIC CONDUCTION IN THE 2D INSULATING PHASE

Authors
PUDALOV VM DIORIO M CAMPBELL JW
Citation
Vm. Pudalov et al., ELECTRIC-FIELD-INDUCED NONOHMIC CONDUCTION IN THE 2D INSULATING PHASE, Surface science, 362(1-3), 1996, pp. 941-944
Citations number
13
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
362
Issue
1-3
Year of publication
1996
Pages
941 - 944
Database
ISI
SICI code
0039-6028(1996)362:1-3<941:ENCIT2>2.0.ZU;2-1
Abstract
Threshold conduction was studied in Si MOSFET samples with mobility ra nging from 5000 to 55 000 cm(2)/V . s, and in the wide temperature ran ge 20 mK-4 K. We found that non-ohmic conduction is qualitatively diff erent in low and high mobility samples near and far from the critical density. In the high mobility samples we observed a novel feature, in that the differential resistance changes sign slightly above the thres hold.