DRIFT AND DEFORMATION OF THE HYSTERESIS CURVE IN THIN-FILM FERROELECTRIC CAPACITORS WITH CONDUCTANCE

Authors
ZHENG LR LIN CL XU WP OKUYAMA M
Citation
Lr. Zheng et al., DRIFT AND DEFORMATION OF THE HYSTERESIS CURVE IN THIN-FILM FERROELECTRIC CAPACITORS WITH CONDUCTANCE, Journal of physics. D, Applied physics, 29(7), 1996, pp. 2020-2024
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
29
Issue
7
Year of publication
1996
Pages
2020 - 2024
Database
ISI
SICI code
0022-3727(1996)29:7<2020:DADOTH>2.0.ZU;2-Q
Abstract
In this paper, the contribution of leakage to the hysteresis curve in thin film ferroelectric capacitors is analysed quantitatively by apply ing a very simple circuit model and experiment. Based on our previous analysis of Current-voltage characteristics in thin film ferroelectric capacitors, the deformed hysteresis loops due to leakage are calculat ed with respect to various barriers and frequencies, and are verified with our laser ablated Pt/Pb(Zr,Ti)O-3/Pt thin film capacitors. Some i nteresting phenomena, such as gap in hysteresis curves, vertical drift of hysteresis loops, etc, are discussed.