FAULT MODELING OF ECL FOR HIGH FAULT COVERAGE OF PHYSICAL DEFECTS

Citation
Sm. Menon et al., FAULT MODELING OF ECL FOR HIGH FAULT COVERAGE OF PHYSICAL DEFECTS, VLSI design, 4(3), 1996, pp. 231-242
Citations number
26
Categorie Soggetti
System Science","Engineering, Eletrical & Electronic","Computer Science Hardware & Architecture
Journal title
ISSN journal
1065514X
Volume
4
Issue
3
Year of publication
1996
Pages
231 - 242
Database
ISI
SICI code
1065-514X(1996)4:3<231:FMOEFH>2.0.ZU;2-N
Abstract
Bipolar Emitter Coupled Logic (ECL) devices can now be fabricated at h igher densities and consumes much lower power, Behaviour of simple and complex ECL gates are examined in the presence of physical faults. Th e effectiveness of the classical stuck-at model in representing physic al failures in ECL gates is examined. It is shown that the conventiona l stuck-at fault model cannot represent a majority of circuit level fa ults, A new augmented stuck-at fault model is presented which provides a significantly higher coverage of physical failures, The model may b e applicable to other logic families that use logic gates with both tr ue and complementary outputs. A design for testability approach is sug gested for on-line detection of certain error conditions occurring in gates with true and complementary outputs which is a normal implementa tion for ECL devices.