Ion chromatography is widely used in different fields of analytical ch
emistry and there is an extensive literature dealing with it, but not
many papers describe the application of ion chromatography to the anal
ysis of high-purity materials. A matter of topical interest in this fi
eld is the determination of impurity or dopant elements in the high-pu
rity semiconductor compounds of A(II)B(VI) type (CdTe) with detection
limits from 10(-4)% to 10(-6)%. In order to eliminate the matrix effec
ts and to reduce the detection limits, methods of concentration are co
mmonly used; ion chromatography has been proved successful to separate
impurities in the presence of large amounts of micro- and macro-compo
nents without any preconcentration and/or pre-separation steps. The pr
oposed procedure deals with the ion chromatographic determination of c
hlorine, sulphur, selenium and phosphorus using a NaOH eluent, iron an
d copper using a PDCA eluent, lead, cobalt, zinc and nickel using an o
xalate eluent. Detection limits range between 1 and 3 10(-5)% and cali
bration curves were found to be linear up to three orders of magnitude
higher,The clear sample solutions were injected directly on to an ion
chromatograph equipped both with a conductivity detector, for the det
ermination of chloride, sulphate, selenate and phosphate ions, and a p
ost-column membrane reactor and variable-wavelength UV-Vis detector, f
or the determination of iron, copper, lead, cobalt, zinc, nickel (and
cadmium, if required). Ion chromatographic responses were compared to
graphite furnace atomic absorption spectrometry and results were found
to be in good agreement (+/-5%).