SELF-FIELD EFFECT IN AG HTS TAPES - SKIN-EFFECT AT RESISTIVITY STRONGLY INCREASING WITH J VERSUS CRITICAL-STATE MODEL/

Authors
HLASNIK I JANSAK L MAJOROS M KOKAVEC J CHOVANEC F
Citation
I. Hlasnik et al., SELF-FIELD EFFECT IN AG HTS TAPES - SKIN-EFFECT AT RESISTIVITY STRONGLY INCREASING WITH J VERSUS CRITICAL-STATE MODEL/, IEEE transactions on magnetics, 32(4), 1996, pp. 2806-2809
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
IEEE transactions on magnetics → ACNP
ISSN journal
00189464
Volume
32
Issue
4
Year of publication
1996
Part
1
Pages
2806 - 2809
Database
ISI
SICI code
0018-9464(1996)32:4<2806:SEIAHT>2.0.ZU;2-1
Abstract
The influence of the sample length, the transverse resistance between Ag matrix and HTS elements as well as of the position of potential tap s and leads on DC and AC voltage-current characteristics and on the me asurement of J(c) and AC losses in Ag sheathed HTS tapes was studied. Experimental results on these parameters obtained on a two concentric layer Ag/Bi-2223 tape are presented and compared with theory. Conclusi ons concerning the correct measurements of these parameters are formul ated.