MoCx films were grown by d.c. reactive sputtering in an Ar-CH4 atmosph
ere onto MgO (001) single-crystal surfaces. The crystallographic struc
ture of the films was revealed by reflection and transmission high-ene
rgy electron diffraction. The microstructure was studied by transmissi
on electron microscopy and the composition of the films was determined
by Auger electron spectroscopy. Under the used processing conditions,
the electron diffraction shows that only MoC with the B-1 structure (
NaCl-type) was formed. The carbon content of the films was found to in
crease with increasing CH4 partial pressure and the lattice parameter
of the B-1 phase was also found to vary in the same direction as a con
sequence of an increase of incorporated carbon in the B-1 lattice. The
determined values for lattice parameters and carbon contents, in the
carbon-richer side, were somewhat greater than the highest ones report
ed for the rapidly quenched B-1 phase. This fact was related to an ext
ension of the homogeneity range of this phase. The results may be attr
ibuted to lower deposition rates which seem to play a prominent role.
In agreement with previous studies performed on analogous reactively s
puttered M-C systems, the grain size was found to decrease when the co
ncentration of reactive gas is increased. This behavior may be interpr
eted in terms of carbon location at the grain boundaries as well as in
terms of a reduction of the mean migration paths of adatoms caused by
an increase of the substrate impinging Bur resulting from more CHn ra
dical formation.