SCANNING PROBE MICROSCOPY AND TUNNELING MEASUREMENTS OF POLYCRYSTALLINE TIN OXIDE-FILMS

Authors
Citation
Tks. Wong et Wk. Man, SCANNING PROBE MICROSCOPY AND TUNNELING MEASUREMENTS OF POLYCRYSTALLINE TIN OXIDE-FILMS, Thin solid films, 287(1-2), 1996, pp. 45-50
Citations number
16
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
287
Issue
1-2
Year of publication
1996
Pages
45 - 50
Database
ISI
SICI code
0040-6090(1996)287:1-2<45:SPMATM>2.0.ZU;2-H
Abstract
Polycrystalline SnO2 films fabricated by thermal evaporation of tin an d isothermal oxidation at 500 degrees C in pure oxygen have been studi ed by atomic force microscopy and scanning tunnelling microscopy. Topo graphic images revealed that individual grains have a polyhedral micro structure consisting of facets intersecting at depressions surrounded by terrace-step features. These may be the result of the anisotropic o xidation of tin. Ambient tunnelling current-voltage characteristics me asured from individual grains ate strongly rectifying, suggesting that the Fermi level is being pinned by surface states within the bandgap. The surface states are due mainly to chemisorbed oxygen species from air.