Tks. Wong et Wk. Man, SCANNING PROBE MICROSCOPY AND TUNNELING MEASUREMENTS OF POLYCRYSTALLINE TIN OXIDE-FILMS, Thin solid films, 287(1-2), 1996, pp. 45-50
Polycrystalline SnO2 films fabricated by thermal evaporation of tin an
d isothermal oxidation at 500 degrees C in pure oxygen have been studi
ed by atomic force microscopy and scanning tunnelling microscopy. Topo
graphic images revealed that individual grains have a polyhedral micro
structure consisting of facets intersecting at depressions surrounded
by terrace-step features. These may be the result of the anisotropic o
xidation of tin. Ambient tunnelling current-voltage characteristics me
asured from individual grains ate strongly rectifying, suggesting that
the Fermi level is being pinned by surface states within the bandgap.
The surface states are due mainly to chemisorbed oxygen species from
air.