SURFACE-DIFFUSION OF FE AND ISLAND GROWTH OF FESI2 ON SI(111) SURFACES

Citation
A. Wohllebe et al., SURFACE-DIFFUSION OF FE AND ISLAND GROWTH OF FESI2 ON SI(111) SURFACES, Thin solid films, 287(1-2), 1996, pp. 93-100
Citations number
25
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
287
Issue
1-2
Year of publication
1996
Pages
93 - 100
Database
ISI
SICI code
0040-6090(1996)287:1-2<93:SOFAIG>2.0.ZU;2-6
Abstract
Fe and Si were codeposited on Si(lll) with an understoichiometric atom ic ratio of 1:3 at substrate temperatures between 580 and 720 degrees C in order to investigate the nucleation and growth of silicide precip itates under growth conditions similar to molecular beam allotaxy. Med ium energy ion scattering and transmission electron microscopy were us ed to determine cluster sizes, phases and shapes. The surface density of clusters decreases and the average cluster size increases with incr easing substrate temperature. Using Venables' theory on surface diffus ion, we found an activation energy for surface diffusion of 0.76 +/- 0 .10 eV for Fe on Si(111) during coevaporation. Our results show that a FeSi2 cluster containing more than three Fe atoms may be regarded as stable on the surface. Clusters of the high-temperature alpha- and of the low-temperature beta-phase were found side by side on the same sam ples.