ENHANCED DEVICE PERFORMANCE BY UNSTRAINED IN0.3GA0.7AS IN0.29AL0.71ASDOPED-CHANNEL FET ON GAAS SUBSTRATES/

Authors
YANG MT CHAN YJ SHIEH JL CHYI JI
Citation
Mt. Yang et al., ENHANCED DEVICE PERFORMANCE BY UNSTRAINED IN0.3GA0.7AS IN0.29AL0.71ASDOPED-CHANNEL FET ON GAAS SUBSTRATES/, IEEE electron device letters, 17(8), 1996, pp. 410-412
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
17
Issue
8
Year of publication
1996
Pages
410 - 412
Database
ISI
SICI code
0741-3106(1996)17:8<410:EDPBUI>2.0.ZU;2-5
Abstract
An alternative In0.3Ga0.7As/In0.29Al0.71As heterostructure based on Ga As is proposed, which provides a large conduction-band discontinuity f or a better carrier confinement, resulting in a high-carrier density, This unstrained high-In channel achieved a better device performance, as compared with the conventional pseudomorphic channel, which is alwa ys limited by the critical thickness. This unstrained channel is also proven to be more stable after a long-term biased-stress.