COBALT DISILICIDE INTERCONNECTS FOR MICROMECHANICAL DEVICES

A focused ion beam system working with 35 keV Co+ ions has been used t o produce CoSi2 interconnects by means of ion beam synthesis. The capa bility of maskless patterning of the focused ion beam, its large depth of focus and the possibility of a dynamic focus control allow the fab rication of interconnects in three-dimensional devices with this metho d. investigations have been performed using polycrystalline, amorphous and single-crystalline silicon substrates. The influence of implantat ion dose has been studied, the electrical resistance and thermal stabi lity of the interconnects has been measured. For room temperature impl antation and annealing at 600 degrees C for 1 h resistivities between 34 and 60 mu delta cm have been obtained for the various substrate mat erials. The CoSi2 interconnects have been found to be thermally stable up to 700 degrees C. In order to demonstrate this method interconnect ion lines have been fabricated on the sloped walls of deep anisotropic ally etched grooves 280 mu m.