J. Teichert et al., COBALT DISILICIDE INTERCONNECTS FOR MICROMECHANICAL DEVICES, Journal of micromechanics and microengineering, 6(2), 1996, pp. 272-278
A focused ion beam system working with 35 keV Co+ ions has been used t
o produce CoSi2 interconnects by means of ion beam synthesis. The capa
bility of maskless patterning of the focused ion beam, its large depth
of focus and the possibility of a dynamic focus control allow the fab
rication of interconnects in three-dimensional devices with this metho
d. investigations have been performed using polycrystalline, amorphous
and single-crystalline silicon substrates. The influence of implantat
ion dose has been studied, the electrical resistance and thermal stabi
lity of the interconnects has been measured. For room temperature impl
antation and annealing at 600 degrees C for 1 h resistivities between
34 and 60 mu delta cm have been obtained for the various substrate mat
erials. The CoSi2 interconnects have been found to be thermally stable
up to 700 degrees C. In order to demonstrate this method interconnect
ion lines have been fabricated on the sloped walls of deep anisotropic
ally etched grooves 280 mu m.