ELECTRONIC-STRUCTURE, ELECTRONIC DECAY, AND DESORPTION PROCESSES OF MOLECULAR-SOLID SICL4 FOLLOWING CORE-LEVEL EXCITATION

Citation
Jm. Chen et al., ELECTRONIC-STRUCTURE, ELECTRONIC DECAY, AND DESORPTION PROCESSES OF MOLECULAR-SOLID SICL4 FOLLOWING CORE-LEVEL EXCITATION, Physical review. B, Condensed matter, 54(3), 1996, pp. 1455-1458
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
3
Year of publication
1996
Pages
1455 - 1458
Database
ISI
SICI code
0163-1829(1996)54:3<1455:EEDADP>2.0.ZU;2-Z
Abstract
We report high-resolution Si L(23)-edge rotal-electron-yield (TEY) mea surements from solid SiCl4, and a comparison with the gas-phase photoa bsorption data to characterize the Si(2p) pre-edge spectral features. By applying resonant photoemission spectroscopy, the spectator Auger p rocess is found to be the major decay channel for the resonantly excit ed Si(2p) core hole of condensed SiCl4. Participant Auger decay makes a notable contribution to the resonant Auger processes for con-to-vale nce excitation. The close resemblance of the photon-stimulated desorpt ion ion spectra and the TEY spectrum was interpreted in terms of the A uger-initiated desorption or Knotek-Feibelman mechanism.